PART |
Description |
Maker |
STB85NF3LL STB85NF3LLT4 |
N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V 0.006 OHM 85A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET⑩II POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFETII POWER MOSFET N-CHANNEL 30V - 0.006ohm - 85A D2PAK LOW GATE CHARGE STripFET?II POWER MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
85EPS12J 85EPS 85EPS08 85EPS08J 85EPS12 |
85 A, 1200 V, SILICON, RECTIFIER DIODE 800V5A条性病。恢复二极管在PowIRtab(短)封 INPUT RECTIFIER DIODE 800V 85A Std. Recovery Diode in a PowIRtab (Short)package 1200V 85A Std. Recovery Diode in a PowIRtabpackage 1200V 85A Std. Recovery Diode in a PowIRtab (Short)package
|
VISHAY SEMICONDUCTORS IRF[International Rectifier]
|
STB60NH02L04 STB60NH02LT4 STB70NFS03L06 STB70NFS03 |
N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET 10 OHM, Quad, SPST, CMOS Analog Switches RADIATION HARD 4096 x 1 BIT STATIC RAM 4 Mbit (512 Kbit x 8) ZEROPOWER SRAM 5.0 V PC real-time clock N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics] MAXIM ZARLINK
|
FQP27P06 |
60V P-Channel MOSFET Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes
|
FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
|
RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use 60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET MOSFET Modules
|
IXYS, Corp. IXYS[IXYS Corporation]
|
RA07N4047M RA07N4047M-01 RA07N4047M-E01 |
MITSUBISHI RF MOSFET MODULE 三菱射频MOSFET模块 30V N-Channel PowerTrench MOSFET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
RA13H4047M RA13H4047M-01 RA13H4047M-E01 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
APTM10SKM05TG |
30V N-Channel PowerTrench MOSFET 278 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Buck chopper MOSFET Power Module
|
Microsemi, Corp. Microsemi Corporation
|
MGA-85563 DEMO-MGA-85A |
MGA-85563 · 3V LNA, 12 to 17dBm Adjustable OIP3, 0.8-6GHz, SOT363(SC-70) DEMO-MGA-85A · Demonstration circuit board for MGA-85563 (0.8 - 6 GHz)
|
Agilent (Hewlett-Packard)
|